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| NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free PRODUCT SUMMARY S2 G2 S1 G1 V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 28m 55m ID 7A -5.5A G1 D1/D2 D1 G2 D2 S1 S2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 1 1 SYMBOL VDS VGS N-Channel P-Channel 40 20 7 6 50 3 2.1 -55 to 150 275 -40 20 -5.5 -4.5 -50 UNITS V V TC = 25 C TC = 70 C ID IDM A TC = 25 C TC = 70 C PD Tj, Tstg TL W C SYMBOL RJC RJA TYPICAL MAXIMUM 6 42 UNITS C / W C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250A Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A VDS = VGS, ID = 250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A VDS = 0V, VGS = 20V Gate-Body Leakage IGSS VDS = 0V, VGS = 20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 40 -40 1.0 -1.0 1.5 -1.5 2.5 -2.5 100 100 V MIN TYP MAX UNIT nA 1 Apr-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free VDS = 32V, VGS = 0V VDS = -32V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch 1 -1 A 10 -10 VDS = 30V, VGS = 0V, TJ = 55 C N-Ch VDS = -30V, VGS = 0V, TJ = 55 C P-Ch On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 6A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 50 -50 30 65 21 38 19 11 42 94 A Drain-Source Resistance1 On-State VGS = -4.5V, ID = -4.5A RDS(ON) VGS = 10V, ID = 7A VGS = -10V, ID = -5.5A m 28 55 Forward Transconductance1 gfs VDS = 10V, ID = 7A VDS = -10V, ID = -5.5A S DYNAMIC Input Capacitance Ciss N-Ch N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel P-Ch N-Ch P-Ch 790 690 175 310 65 75 16 14 2.5 2.2 2.1 1.9 988 863 245 430 98 113 pF Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Crss VGS = 0V, VDS = -10V, f = 1MHz N-Ch P-Ch N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 7A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -5.5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Qg Qgs nC Qgd 2 Apr-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 td(on) N-Channel VDS = 20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2.2 6.7 7.5 9.7 11.8 19.8 3.7 12.3 4.4 13.4 15 19.4 21.3 35.6 7.4 22.2 nS tr ID 1A, VGS = 10V, RGEN = 6 P-Channel VDS = -20V td(off) tf N-Ch P-Ch ID -1A, VGS = -10V, RGEN = 6 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Forward Voltage1 IF = 7A, VGS = 0V VSD IF = -5.5A, VGS = 0V IF = 8A, dlF/dt = 100A / S Reverse Recovery Time trr IF = -7A, dlF/dt = 100A / S Reverse Recovery Charge 1 2 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 42 55 30 52 1.2 -1.2 V nS Qrr nC Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P2804ND5G", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 3 Apr-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 Is - Reverse Drain Current(A) T A = 125 C 1 25C 0.1 -55 C 0.01 0.001 0 0.2 0.6 0.8 1.0 0.4 VSD - Body Diode Forward Voltage(V) 1.2 1.4 4 Apr-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free 5 Apr-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free P-CHANNEL 100 -Is - Reverse Drain Current(A) V GS = 0V 10 T A = 125 C 1 0.1 25 C -55 C 0.01 0.001 0 0.8 1.0 1.2 0.2 0.6 0.4 -VSD - Body Diode Forward Voltage(V) 1.4 6 Apr-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free 7 Apr-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free TO-252-5 (DPAK) MECHANICAL DATA mm Dimension Min. A B C D E F G 9.0 2.1 0.4 1.1 0.4 0.00 5.3 5.5 Typ. 9.5 2.3 0.5 1.2 0.5 Max. 10.0 2.5 0.6 1.3 0.6 0.3 5.7 H I J K L M N Dimension Min. 1.3 6.3 4.8 0.8 0.3 1.1 Typ. 1.5 6.5 5.0 1.3 0.5 1.3 Max. 1.7 6.7 5.2 1.8 0.7 1.5 mm A B C F E H G L K M J I D 8 Apr-18-2005 |
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